symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c2a i dm t c = 25 c, pulse width limited by t jm 8a i ar 2 a e ar t c = 25 c6mj e as t c = 25 c 200 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 18 ? p d t c = 25 c54w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. weight 4 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s high voltage mosfet n-channel enhancement mode avalanche energy rated g = gate, d = drain, s = source, tab = drain d (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 800 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 500 a r ds(on) v gs = 10 v, i d = 0.5 i d25 6.2 ? pulse test, t 300 s, duty cycle d 2 % features y international standard packages y low r ds (on) hdmos tm process y rugged polysilicon gate cell structure y low package inductance (< 5 nh) - easy to drive and to protect y fast switching times applications y switch-mode and resonant-mode power supplies y flyback inverters y dc choppers advantages y space savings y high power density 98541b(01/03) g d s to-220ab (ixtp) ? 2003 ixys all rights reserved g s to-263 aa (ixta) d (tab) v dss = 800 v i d25 = 2 a r ds(on) = 6.2 ? ? ? ? ? ixta 2n80 ixtp 2n80 preliminary data
ixys reserves the right to change limits, test conditions, and dimensions. ixta 2n80 ixtp 2n80 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 ? i d25 , pulse test 1.0 2.0 s c iss 440 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 56 pf c rss 15 pf t d(on) 15 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 i d25 18 ns t d(off) r g = 18 ?, (external) 30 ns t f 15 ns q g(on) 22 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 i d25 5.5 nc q gd 12 nc r thjc 2.3 k/w r thck (ixtp) 0.5 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 2 a i sm repetitive; pulse width limited by t jm 8a v sd i f = i s , v gs = 0 v, 1.8 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt = 100 a/ s, v r = 100 v 510 n s pins: 1 - gate 2 - drain 3 - source 4 - drain bottom side to-220 ad dimensions to-263 aa outline 1. gate 2. drain 3. source 4. drain bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029
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